NTMS4917NR2G

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NTMS4917NR2G datasheet

• Маркировка
  NTMS4917NR2G
• Производитель
  ON Semiconductor
• Описание
  ON Semiconductor NTMS4917NR2G Continuous Drain Current: 7.1 A Current - Continuous Drain (id) @ 25?° C: 7.1A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fall Time: 12 ns Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 19 S Gate Charge (qg) @ Vgs: 15.6nC @ 4.5V Gate Charge Qg: 15.6 nC Input Capacitance (ciss) @ Vds: 1054pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: SMD/SMT Mounting Type: * Package / Case: * Power - Max: 880mW Power Dissipation: 1.28 W Rds On (max) @ Id, Vgs: 11 mOhm @ 11A, 10V Resistance Drain-source Rds (on): 15 mOhms Rise Time: 6.3 ns Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.5V @ 250?µA
• Количество страниц
  3 шт.
• Форматы файла
  HTML, PDF

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